دیتاشیت STP11NK50ZFP
مشخصات دیتاشیت
| نام دیتاشیت | ST(B,P)11NK50Z(FP) |
|---|---|
| حجم فایل | 418.497 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 16 |
دانلود دیتاشیت ST(B,P)11NK50Z(FP) |
ST(B,P)11NK50Z(FP) Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP11NK50ZFP
- Power Dissipation (Pd): 30W
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 10A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 520mΩ@10V,4.5A
- Package: TO-220F-3
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: STP11N
- detail: N-Channel 500V 10A (Tc) 125W (Tc) Through Hole TO-220AB
